DATA STORAGE AT THE NANOSCALE ADVANCES AND APPLICATIONS【2025|PDF下载-Epub版本|mobi电子书|kindle百度云盘下载】

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1.Overview of Information Data Storage：An Introduction&Gan Fuxi1

1.1 Importance and Research Aims of Information Data Storage2

1.2 Development Trends of Different Information Storage Devices3

1.2.1 In-Line Data Storage3

1.2.2 Storage Class Memory5

1.2.3 Magnetic Data Storage6

1.2.4 Rethinking of Optical Data Storage Development7

1.3 Nanolithography for Information Storage9

1.3.1 Characteristics of and Requirements for Nanolithography9

1.3.2 Nanolithography by Optical Means9

1.3.3 Advanced Optical Lithography10

1.4 Fast Phase Change12

1.4.1 Fast Phase Change Initiated by Ultra-Short Laser Pulse13

1.4.2 New Application of Phase Change Process in Information Data Storage Field15

2.Super-Resolution Optical Data Storage Using Binary Optics&Wang Haifeng and Gan Fuxi19

2.1 Design of the Super-Resolution Binary Optics20

2.1.1 Binary Optics Design Based on Scalar Diffraction Theory21

2.1.2 Binary Optics Design Based on Vector Diffraction Theory23

2.2 Generation of Super-Resolution Longitudinally Polarized Light Beamwith Binary Optics26

2.3 Application of Binary Optics to Near-Field Recording28

2.3.1 System Configuration for Circular Polarized Light28

2.3.2 System Configuration for Longitudinally Polarized Light31

2.3.3 Near-Field Recording Using Optical Antennas33

3.Focal Spot Engineering for Bit-by-Bit Recording&Gan Xiaosong and Wu Jingzhi39

3.1 Introduction39

3.2 Far-Field Modulation for Super-Resolution Focal Spot41

3.3 Saturation Microscopy47

3.4 Breaking the Diffraction Limit Without Diffraction？50

3.5 Discussion53

4.Plasmonic Nanofocusing and Data Storage&Cao Qing59

4.1 Surface Plasmon and Its Properties59

4.1.1 Surface Plasmons59

4.1.2 Enhanced Transmission61

4.1.3 Metal Wire Surface Plasmon62

4.1.4 Surface Plasmon Laser63

4.1.5 Graphene Plasmon64

4.2 Plasmonic Nanofocusing and Nanoimaging64

4.2.1 Tapered Structure64

4.2.2 Multiple Concentric Groove Metallic Lens67

4.2.3 Metal Films for Super-Diffraction-Limited Imaging68

4.3 Plasmonic Data Storage at the Nanoscale70

4.3.1 Brief Introduction of High-Density Optical Data Storage70

4.3.2 Two Basic Concepts of Plasmonic Data Storage71

4.3.2.1 High-density data storage technology mixed with plasmonic near-field transducers and bit-patterned magnetic materials71

4.3.2.2 Five-dimensional optical recording mediated by surface plasmons in gold nanorods72

4.4 Plasmonic Nanolithography74

4.4.1 Brief Introduction of Plasmonic Nanolithography74

4.4.2 Plasmonic Contact Lithography75

4.4.3 Imaging Lithography of Planar Lens76

4.4.4 Plasmonic Direct Writing Nanolithography77

5.Nano-Optical Data Storage with Nonlinear Super-Resolution Thin Films&Wei Jingsong and Gan Fuxi91

5.1 Introduction92

5.2 The Principle of Nonlinear Super-Resolution Nano-Optical Data Storage93

5.3 Optical Response of the Nonlinear Layer94

5.3.1 Nonlinear Response of Sb-Based Phase Change Thin Films95

5.3.2 Nonlinear Response of Metal Doped Semiconductor Thin Films98

5.3.2.1 The sample preparation98

5.3.2.2 Measurement of the optical nonlinear properties100

5.3.2.3 The mechanism of nonlinear response102

5.4 The Formation of Super-Resolution Optical Spot107

5.4.1 Theoretical Basis of Super-Resolution Spot Formation107

5.4.2 Super-Resolution Spot Formation by Ag Doped Si Thin Films109

5.4.3 Super-Resolution Spot Formation by Sb-Based Phase Change Thin Films112

5.5 Experimental Results of the Nano-Optical Data Recording and Readout114

5.6 On the Dynamic Readout Characteristic of the Nonlinear Super-Resolution Thin Films120

5.6.1 Theoretical Analysis of the Dependence of Readout Threshold Power on Mark Size120

5.6.2 Dependence of Readout Characteristic on Laser Power122

5.6.3 Dependence of Readout Characteristic on Laser Irradiation Time123

5.6.4 Analysis of the Influence of Laser Energy on Dynamic Readout Characteristic126

5.7 Conclusion128

6.Mastering Technology for High-Density Optical Disc&Geng Yongyou and Wu Yiqun131

6.1 Introduction131

6.2 Major Mastering Technologies for High-Density Optical Disc135

6.2.1 Electron Beam Recording135

6.2.2 UV and DUV Recording138

6.2.3 Near-Field Optical Recording140

6.2.4 Laser Thermal Recording143

6.2.4.1 Mechanism of laser thermal recording143

6.2.4.2 Materials for laser thermal recording144

6.2.4.3 Writing strategy for laser thermal recording162

6.2.5 STED Recording163

6.2.5.1 Principle of STED microscopy163

6.2.5.2 Applications in nanorecording164

6.3 Conclusion166

7.Laser-Induced Phase Transition and Its Application in Nano-Optical Storage&Wang Yang and Gan Fuxi171

7.1 Introduction：Phenomena and Applications of Laser-Induced Phase Transition in the Optical Storage171

7.1.1 Amorphous and Crystalline States for Binary Memory173

7.1.2 Transient States for Self-Masking Super-Resolution174

7.1.3 Meta-Stable Multi-States for Multilevel Recording176

7.2 Physical Process of Laser-Induced Phase Transition177

7.3 Probing Method for Laser-Induced Phase Transition Process182

7.4 Phase Transition Dynamics Driven by Laser Pulses185

7.4.1 Carrier Dynamics Driven by Ultrashort Laser Pulses185

7.4.2 Laser Pulse-Induced Amorphization Process190

7.4.3 Laser Pulse-Induced Crystallization Process194

7.4.3.1 Comparison of optical and electrical transient response during nanosecond laser pulse-induced crystallization194

7.4.3.2 Optical transients during the picosecond laser pulse-induced crystallization：comparison of nucleation-driven and growth-driven processes198

7.4.3.3 Optical transients during the femtosecond laser pulse-induced crystallization206

7.5 Phase-Change Optical Disk Technology213

7.6 New Optical Memory Functions Based on Phase-Change Materials221

7.6.1 Fast Cycling Driven by Ultrashort Laser Pulses with Identical Fluences221

7.6.2 Optical-Electrical Hybrid Operation for Phase-Change Materials224

7.6.3 Metal-Nanop article-Embedded Phase-Change Recording Pits for Plasmonics and Super-Resolution226

7.6.4 Polarization Readout for Multilevel Phase-Change Recording by Crystallization Degree Modulation232

7.6.5 Polarized Laser-Induced Dichroism of Phase-Change Materials239

7.6.6 Fluorescence Multi-States of Ion-Doped Phase-Change Thin Films246

8.SPIN-Based Optical Data Storage&Gu Min，Cao Yaoyu，Li Xiangping，and Gan Zongsong259

8.1 SPIN Based on Single-Photon Photoinduction264

8.1.1 Theoretical Model of the SPIN Process264

8.1.2 Experimental Demonstration of Single-Photon SPIN267

8.2 SPIN Based on Two-Photon Photoinduction270

8.2.1 Experimental Demonstration of Two-Photo SPIN271

8.2.2 Properties and Limitations276

8.3 Conclusion278

9.Magnetic Random Access Memory&Han Xiufeng and Syed Shahbaz Ali281

9.1 History of the Development of MRAM Devices281

9.2 MRAM Devices Based on GMR/AMR Effects287

9.3 Field-Write Mode MRAM Based on TMR Effect290

9.3.1 Astroid-Mode MRAM292

9.3.2 Principles of Astroid-Mode MRAM293

9.3.3 Development of Astroid-Mode MRAM294

9.3.4 Toggle-Mode MRAM296

9.3.5 Principles of Toggle-Mode MRAM297

9.3.6 Write-Current Reduction in Toggle-Mode MRAM298

9.3.7 Energy Diagram of Toggle Operation301

9.3.8 Competitive Market306

9.3.9 MRAM Based on Vertical Current Writing and Its Control Method306

9.3.10 Field-Write Mode MRAM Chip-Design307

9.4 Spin Transfer Torque MRAM Based on Nanoscale Magnetic Tunnel Junction MTJ309

9.4.1 Spin Transfer Torque Effects312

9.4.2 STT Effects in a Multilayer Thin-Film Stack313

9.4.3 STT MRAM with an in-Plane Magnetic Configuration315

9.4.4 Switching Characteristics and Threshold in MTJs316

9.4.5 Switching Probability in the Thermal Regime317

9.4.6 STT MRAM with a Perpendicular Magnetic Configuration318

9.4.7 Principles of STT-MRAM with a Perpendicular Magnetic Configuration319

9.4.8 Reliability of Tunnel Barriers in MTJs322

9.4.9 Write-Current Reduction323

9.4.10 Current-Write Mode MRAM Chip-Design325

9.4.11 Introduction of the STT-MRAM Chip Design327

9.5 Asymmetric MTJ Switching329

9.6 Nanoring and Nano-Elliptical Ring-Shaped MTJ-Based MRAM331

9.7 Thermally Assisted Field Write in MRAM334

9.7.1 Self-Referenced MRAM338

9.8 Outlook to the Future MRAM339

9.8.1 Separated Read and Write Operation MRAM340

9.8.2 Domain Wall Motion MRAM340

9.8.3 Rashba Effect/Spin-Orbital Coupling Effect Based MRAM342

9.8.4 Spin Hall Effect-Based MRAM344

9.8.5 Electric Field Switching MRAM346

9.8.6 Roadmap of MRAM Demo Device Development348

10.RRAM Device and Circuit&Lin Yinyin，Song Yali，and Xue Xiaoyong363

10.1 Introduction363

10.2 RRAM Cell368

10.2.1 1T1R Cell with Transistor as Selector Device368

10.2.1.1 1T1R cell structure368

10.2.1.2 Bipolar and unipolar operation372

10.2.2 Cell Using Diode as Selector Device374

10.2.2.1 1D1R cell with traditional one-directional diode as selector device for unipolar operation374

10.2.2.2 1BD1R cell with bidirectional diode as selector device in support of both bipolar and unipolar operation376

10.2.3 Self-Selecting RRAM Cell379

10.2.3.1 Hybrid memory379

10.2.3.2 Complementary-RRAM382

10.3 Resistive Switching Mechanism383

10.3.1 ITRS Categories of RRAM383

10.3.2 Resistive Switching Behavior387

10.3.3 Forming and SET Process388

10.3.4 Filament Type389

10.3.5 Filament Size and the Scaling Characteristics391

10.4 Influencing Factors and Optimization of RRAM Performance393

10.4.1 Decrease of Switching Current393

10.4.1.1 Multilayer architecture395

10.4.1.2 Control of the compliance current397

10.4.2 Enhancement of Uniformity398

10.4.2.1 Electrode effects399

10.4.2.2 Buffer layer inserting and bilayer construct400

10.4.2.3 Embedded metal to control conductive path401

10.4.2.3 Programming algorithm402

10.5 RRAM Reliability403

10.5.1 The Retention Test Method403

10.5.2 Retention Model and Improvement Methods404

10.5.2.1 RRAM retention failure model404

10.5.2.2 Retention improvement by forming high-density Vo405

10.5.2.3 Retention improvement by dynamic self-adaptive write method406

10.5.3 Endurance Model and Improvement Methods408

10.5.3.1 Endurance failure model408

10.5.3.2 High-endurance cell architecture411

10.5.3.3 Enhancement of endurance by programming algorithm414

10.6 Circuit Techniques for Fast Read and Write415

10.6.1 Current SA for High-Speed Read415

10.6.1.1 Feedback-regulated bit line biasing approach416

10.6.1.2 Process-temperature-aware dynamic BL-bias scheme417

10.6.2 Fast Verify for High-Speed Write418

10.7 Yield and Reliability Enhancement Assisted by Circuit420

10.7.1 Circuit Techniques to Improve Read Yield420

10.7.1.1 Parallel-series reference cell421

10.7.1.2 SARM reference421

10.7.1.3 Body-drain-driven current sense amplifier422

10.7.1.4 Temperature-aware bit line biasing423

10.7.2 Circuit-Assisted Write Yield Improvement and Operation Power Reduction425

10.7.2.1 Self-adaptive write mode426

10.7.2.2 Self-timing write with feedback427

10.7.3 Circuit-Assisted Endurance and Retention Improvement428

10.7.3.1 Filament scaling forming technique and level-verify-write scheme428

10.7.3.2 Dynamic self-adaptive write method431

10.8 Circuit Strategies for 3D RRAM432

10.8.1 Sneaking Path and Large Power Consumption of Conventional Cross-Bar Architecture434

10.8.2 3D RRAM Based on 1TXR Cell without Access Transistor435

10.8.2.1 1TXR cell436

10.8.2.2 Array architecture437

10.8.2.3 Write algorithm to inhibit write disturbance438

10.8.2.4 Read algorithm to inhibit read disturbance441

10.8.3 3D RRAM Based on 1D1R Cell442

10.8.3.1 Array architecture442

10.8.3.2 Write circuit with leakage compensation for accurate state-change detection443

10.8.3.3 Read circuit with bit line capacitive isolation for fast swing in SA444

10.8.4 3D RRAM Based on 1BD1R445

10.8.4.1 Array architecture445

10.8.4.2 Programming conditions for 1BD array446

10.8.4.3 Multi-bit write architecture with write dummy cell447

10.8.5 Vertical Stack with Cost Advantage of Lithography448

10.8.5.1 Cross section of cell and array448

10.8.5.2 Integration450

10.8.5.3 Cost advantage of lithography451

11.Phase-Change Random Access Memory&Liu Bo463

11.1 Introduction464

11.2 Principle of PCRAM465

11.3 Comparisons between PCRAM and SRAM，DRAM and Flash467

11.4 History of PCRAM R＆D470

11.5 Phase-Change Material474

11.5.1 Materials Selective Method474

11.5.2 GeSbTe System476

11.5.3 SbTe-Based Materials483

11.5.4 SiSbTe System487

11.5.5 GeTe System496

11.5.6 Sb-Based Materials498

11.5.7 Nano-Composite Phase-Change Materials501

11.5.8 Superlattice-Like Structure Phase-Change Materials503

11.6 Memory Cell Selector506

11.6.1 Overview506

11.6.2 Diode510

11.7 Memory Cell Resistor Structure514

11.8 Processing517

11.8.1 Deposition of Phase-Change Materials517

11.8.2 Etching of Phase-Change Materials519

11.8.3 Chemical Mechanical Polishing of Phase-Change Materials523

11.9 Characteristics of PCRAM Memory Cell528

11.9.1 Reduction of Operation Current/Voltage528

11.9.2 Reliability539

11.9.3 Data Retention543

11.9.4 Speed544

11.10 Future Outlook546

11.10.1 Scaling Properties547

11.10.2 Multi-Bit Operation549

11.10.3 Three-Dimensional Integration552

11.11 Potential Application of PCRAM553

12.Nano-DRAM Technology for Data Storage Application&Wang Pengfei and Zhang David Wei591

12.1 Introduction to DRAM Cell Technology592

12.1.1 Cell Operation of DRAM Cell592

12.1.2 DRAM Device and Array Structure594

12.1.3 Requirements of Nano-Scale DRAM Cell595

12.1.3.1 Capacitance of the storage node595

12.1.3.2 Drive current and off leakage current of array access transistor596

12.2 Nano-DRAM Memory Cell and Array Design596

12.2.1 Layout of the Stacked-Capacitor DRAM597

12.2.2 Design of the Array Transistor598

12.2.2.1 RCAT and saddle-fin transistor598

12.2.2.2 Extended U-shaped device599

12.2.2.3 FinFET for DRAM601

12.2.2.4 Spherical transistor and buried word line array device602

12.2.3 Cell Architecture603

12.2.3.1 Connection between the storage capacitor and array transistor603

12.2.3.2 6F2 cell design604

12.2.4 Storage Capacitor606

12.3 Novel DRAM Concepts606

12.3.1 Floating Body Memory Cell608

12.3.2 Tunneling Transistor-Based Memory Cell610

12.3.2.1 Device working principle611

12.3.2.2 Device operation613

12.3.2.3 Modeling of the memory access transistor of SFG DRAM：TFET615

12.3.2.4 Capacitive coupling in the SFG DRAM cell617

12.3.2.5 Transient behavior618

12.3.2.6 Investigation of the integration methods622

12.3.2.7 Self-refreshable “1” and nondestructive read properties623

12.3.2.8 Scalability and U-shaped SFG memory624

12.3.2.9 Extended applications of SFG：1-T Image sensor626

12.3.2.10 Integration with logic and flash memory devices628

12.4 Conclusions629

13.Ferroelectric Memory&Wang Genshui，Gao Feng and Dong Xianlin633

13.1 Introduction633

13.2 Ferroelectricity635

13.2.1 Historical Overview635

13.2.2 Characteristics637

13.2.2.1 Polarization and hysteresis639

13.2.2.2 Domains and switching640

13.2.2.3 Materials642

13.2.2.4 Perovskite oxides643

13.2.2.5 Size effects645

13.2.2.6 Strain646

13.2.3 Applications647

13.3 Ferroelectric Memory647

13.3.1 FeRAM648

13.3.1.1 FeCapacitor648

13.3.1.2 Depolarizing fields and critical thickness648

13.3.1.3 FeRAM650

13.3.2 FeFETRAM651

13.3.3 Reliabilities653

13.3.3.1 Retention653

13.3.3.2 Endurance654

13.3.3.3 Temperature-dependent dielectric anomaly658

13.3.4 Key Technologies663

13.3.5 Competing Memory Technologies664

13.4 Future Prospects665

13.4.1 Multiferroics Memory665

13.4.2 Nanoscale Ferroelectric Memory666

13.4.3 Organic Ferroelectric Memory667

13.5 Conclusions668

14.Nanomagnetic and Hybrid Information Storage&Jin Qingyuan and Ma Bin675

14.1 Overview of Magnetic Recording and Hard Disk Drive675

14.2 Hard Drive Technology679

14.2.1 Inductive Magnetic Head680

14.2.2 Magnetoresistive Head680

14.2.3 Giant Magnetoresistive Head682

14.3 Hard Drive Technology687

14.3.1 Superparamagnetic Effect and Bottleneck of Longitudinal Recording Media687

14.3.2 Perpendicular Recording Media688

14.3.3 L10-Ordered FePt690

14.3.4 Exchange-Coupled Composite Media693

14.4 Emerging Magnetic Data Storage Technology695

14.4.1 Perpendicular Magnetic Recording695

14.4.2 Heat-Assisted Magnetic Recording696

14.4.3 Patterned Media699

Index707